tcst110. up to tcst230. vishay telefunken 1 (9) www.vishay.de ? faxback +1-408-970-5600 document number 83764 rev. a5, 08jun99 transmissive optical sensor with phototransistor output description this device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. the operating wavelength is 950 nm. the detector consists of a phototransistor. applications contactless optoelectronic switch, control and counter features compact construction no setting efforts polycarbonate case protected against ambient light 2 case variations 3 different apertures ctr selected in groups (regarding fourth number of type designation) 15136 a) b) + + 95 10796 7.6 0.3o e d top view order instruction ordering code resolution (mm) / aperture (mm) remarks tcst1103 a) 0.6 / 1.0 no mounting flags TCST2103 b) with two mounting flags tcst1202 a) 0.4 / 0.5 no mounting flags tcst2202 b) with two mounting flags tcst1300 a) 0.2 / 0.25 no mounting flags tcst2300 b) with two mounting flags
tcst110. up to tcst230. vishay telefunken www.vishay.de ? faxback +1-408-970-5600 2 (9) rev. a5, 08jun99 document number 83764 absolute maximum ratings input (emitter) parameter test conditions symbol value unit reverse voltage v r 6 v forward current i f 60 ma forward surge current t p 10 s i fsm 3 a power dissipation t amb 25 c p v 100 mw junction temperature t j 100 c output (detector) parameter test conditions symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 7 v collector current i c 100 ma collector peak current t p /t = 0.5, t p 10 ms i cm 200 ma power dissipation t amb 25 c p v 150 mw junction temperature t j 100 c coupler parameter test conditions symbol value unit total power dissipation t amb 25 c p tot 250 mw operating temperature range t amb 55 to +85 c storage temperature range t stg 55 to +100 c soldering temperature 2 mm from case, t 5 s t sd 260 c
tcst110. up to tcst230. vishay telefunken 3 (9) www.vishay.de ? faxback +1-408-970-5600 document number 83764 rev. a5, 08jun99 electrical characteristics (t amb = 25 c) input (emitter) parameter test conditions symbol min. typ. max. unit forward voltage i f = 60 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf output (detector) parameter test conditions symbol min. typ. max. unit collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 10 a v eco 7 v collector dark current v ce = 25 v, i f = 0, e = 0 i ceo 100 na coupler parameter test conditions type symbol min. typ. max. unit current transfer ratio v ce = 5 v, i f = 20 ma tcst1103, TCST2103 ctr 10 20 % f tcst1202, tcst2202 ctr 5 10 % tcst1300, tcst2300 ctr 1.25 2.5 % collector current v ce = 5 v, i f = 20 ma tcst1103, TCST2103 i c 2 4 ma f tcst1202, tcst2202 i c 1 2 ma tcst1300, tcst2300 i c 0.25 0.5 ma collector emitter saturation voltage i f = 20 ma, i c = 1 ma tcst1103, TCST2103 v cesat 0.4 v g i f = 20 ma, i c = 0.5 ma tcst1202, tcst2202 v cesat 0.4 v i f = 20 ma, i c = 0.1 ma tcst1300, tcst2300 v cesat 0.4 v resolution, path of the shutter crossing the i crel = 10 to 90% tcst1103, TCST2103 s 0.6 mm g radiant sensitive zone tcst1202, tcst2202 s 0.4 mm tcst1300, tcst2300 s 0.2 mm
tcst110. up to tcst230. vishay telefunken www.vishay.de ? faxback +1-408-970-5600 4 (9) rev. a5, 08jun99 document number 83764 switching characteristics parameter test conditions symbol typ. unit turn-on time v s = 5 v, i c = 2 ma, r l = 100 (see figure 1) t on 10.0 s turn-off time s c l (g) t off 8.0 s 95 10897 + 5 v i c = 2 ma; adjusted through input amplitude r g = 50 t p t p = 50 s t = 0.01 i f 0 i f 50 100 oscilloscope r l 1 m c l 20 pf channel i channel ii figure 1. test circuit, saturated operation t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time figure 2. switching times
tcst110. up to tcst230. vishay telefunken 5 (9) www.vishay.de ? faxback +1-408-970-5600 document number 83764 rev. a5, 08jun99 typical characteristics (t amb = 25 c, unless otherwise specified) 0 30 60 90 120 0 100 200 300 400 150 95 11088 p total power dissipation ( mw ) tot t amb ambient temperature ( c ) coupled device phototransistor ir-diode figure 3. total power dissipation vs. ambient temperature 0.1 1.0 10.0 100.0 1000.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f forward voltage ( v ) 96 11862 f i forward current ( ma ) figure 4. forward current vs. forward voltage 25 0 25 50 0 0.5 1.0 1.5 2.0 ctr relative current transfer ratio rel t amb ambient temperature ( c ) 100 95 11089 75 v ce =5v i f =20ma figure 5. relative current transfer ratio vs. ambient temperature 0255075 1 10 100 1000 10000 i collector dark current, ceo t amb ambient temperature ( c ) 100 95 11090 with open base ( na ) v ce =25v i f =0 figure 6. collector dark current vs. ambient temperature 0.001 0.010 0.100 1.000 10.000 0.1 1.0 10.0 100.0 i f forward current ( ma ) 96 12066 v ce =5v i collector current ( ma ) c figure 7. collector current vs. forward current 0.01 0.10 1.00 10.00 0.1 1.0 10.0 100.0 v ce collector emitter voltage ( v ) 96 12067 i collector current ( ma ) c 20ma 10ma 5ma 2ma 1ma i f =50ma figure 8. collector current vs. collector emitter voltage
tcst110. up to tcst230. vishay telefunken www.vishay.de ? faxback +1-408-970-5600 6 (9) rev. a5, 08jun99 document number 83764 0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 i f forward current ( ma ) 96 12068 v ce =5v ctr current transfer ratio ( % ) figure 9. current transfer ratio vs. forward current 02 4 6 i c collector current ( ma ) 10 95 11086 t / t turn on / turn off time ( s ) off on non saturated operation v s =5v r l =100 t on 0 5 10 15 20 8 t off figure 10. turn on / off time vs. collector current 0 10 20 30 40 50 60 70 80 90 100 110 0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5 s displacement ( mm ) 96 12005 i relative collector current crel 0 s a=1mm figure 11. relative collector current vs. displacement 0 10 20 30 40 50 60 70 80 90 100 110 0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5 s displacement ( mm ) 96 12006 i relative collector current crel 0 s a=0.5mm figure 12. relative collector current vs. displacement 0 10 20 30 40 50 60 70 80 90 100 110 0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5 s displacement ( mm ) 96 12007 i relative collector current crel 0 s a=0.25mm figure 13. relative collector current vs. displacement
tcst110. up to tcst230. vishay telefunken 7 (9) www.vishay.de ? faxback +1-408-970-5600 document number 83764 rev. a5, 08jun99 dimensions of tcst1.0. in mm 96 12094
tcst110. up to tcst230. vishay telefunken www.vishay.de ? faxback +1-408-970-5600 8 (9) rev. a5, 08jun99 document number 83764 dimensions of tcst2.0. in mm 96 12095
tcst110. up to tcst230. vishay telefunken 9 (9) www.vishay.de ? faxback +1-408-970-5600 document number 83764 rev. a5, 08jun99 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
|
